1GB DDR2 200pin So-DIMM DDR2-667 Unbuffer Non-ECC
ITCurry #: 31663241 | Article #: TS128MSQ64V6J-
EcranMémoirePoidsProcesseurDisque durSSDEcranRésolutionConnectivitéMémoireBoitierOSEcranTypeVitesse NoirVitesse CouleursModèleVitesseFacteur de formeInterne / ExterneNombre de portsUplink / MédiasMontage
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Informations sur le produit
The TS128MSQ64V6J is a 128M x 64bits DDR2-667 SO-DIMM. The TS128MSQ64V6J consists of 16pcs 64Mx8its DDR2 SDRAMs in 60 ball FBGA packages and a 2048 bits serial EEPROM on a 200-pin printed circuit board. The TS128MSQ64V6J is a Dual In-Line Memory Module and is intended for mounting into 200-pin edge connector sockets.
Synchronous design allows precise cycle control with the use of system clock. Data I/O transactions are possible on both edges of DQS. Range of operation frequencies, programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
Features
-RoHS compliant products.
-JEDEC standard 1.8V ± 0.1V Power supply
-VDDQ=1.8V ± 0.1V
-Max clock Freq: 333MHZ; 667Mb/s/Pin.
-Posted CAS
-Programmable CAS Latency: 3,4,5
-Programmable Additive Latency :0, 1,2,3 and 4
-Write Latency (WL) = Read Latency (RL)-1
-Burst Length: 4,8(Interleave/nibble sequential)
-Programmable sequential / Interleave Burst Mode
-Bi-directional Differential Data-Strobe (Single-ended
data-strobe is an optional feature)
-Off-Chip Driver (OCD) Impedance Adjustment
-MRS cycle with address key programs.
-On Die Termination
-Serial presence detect with EEPROM